PH435 high linearity ingap hbt amplifier features applications functional diagram 4 1 2 3 features 1500mhz - 3000mhz 14.8 db gain at 2.3ghz +25 dbm p1db +42 dbm output ip3 single voltage supply lead - free / green / rohs - applications mobile infrastructure pcs, wcdma, wibro w-lan / ism rfid / fixed wireless functional diagram function pin no. rf in 1 lead free / green / rohs compliant sot-89 package rf in 1 rf out / bias 3 ground 2,4 the PH435 is a high performance ingap hbt mmic amplifier and high linearity driver amplifier in a high quality sot-89 package. the device features excellent input and output return loss, highly linear performance. the device can be easil y matched to obtain o p timum p owe r and linearit y . the p roduct is tar g eted fo r useasdrive r description y p p y p g amplifier for wireless infrastructure applications. the PH435 operates from a single +5 voltage supply and have an internal active bias. all devices are 100% rf and dc tested specifications symbol parameters units freq. min. typ. max. s21 gain db 1900 mhz 2140 mhz 2300 mhz 16.8 15.1 14.8 s11 input return loss db 1900 mhz 2140 mhz 2300 mhz -17 -17 -14 s22 output return loss db 1900 mhz 2140 mhz 2300 mhz -17 -14 -14 p1db output power @1db compression dbm 1900 mhz 2140 mhz 2300 mhz 25.5 25.5 25.5 oip3 output third order intercept dbm 1900 mhz 2140 mhz 2300 mhz 42.0 42.0 42.5 nf noise figure db 1900 mhz 2140 mhz 2300 mhz 3.1 3.0 3.2 http://www.prewell.com november 2006 1 2300 mhz 3.2 v / i device voltage / current v/ma 5/152 rth thermal resistance c/w 53 test conditions : t=25 c, supply voltage=+5v, 50ohm system, oip3 measured with two tones at an output power of +7db m/tone separated by 1mhz. www.datasheet.co.kr datasheet pdf - http://www..net/
PH435 high linearity ingap hbt amplifier 1900 mhz application circuit frequency 1900 mhz s21 : gain 17.0 db s11 : input return loss -19 db s22 : output return loss -19 db output p1db +25.5 dbm 1900 mhz application circuit 20pf 1uf +5 v output ip3 @7dbm +42 dbm is-95a ch. power @ -45dbc acpr +19.0 dbm noise figure 3.1 db supply voltage 5 v current 152 ma 1.5pf rf in rf out 2.0pf 1.0pf 20pf 22nh 50 ? /6mm -18 -12 -6 0 output return loss s22(db) +25 o c -15 -10 -5 0 input return loss s11(db) +25 o c 16 18 20 22 gain vs. frequency gain(db) +25 o c 1800 1850 1900 1950 2000 -30 -24 frequency(mhz) +25 c -40 o c +85 o c 1800 1850 1900 1950 2000 -25 -20 frequency(mhz) +25 o c -40 o c +85 o c 1800 1850 1900 1950 2000 12 14 frequency(mhz) +25 c -40 o c +85 o c 30 32 p1db vs. frequency 45 50 +7dbm/tone, +25 o c output ip3 vs. frequency 44 46 freq=1900mhz, +7dbm/tone oip3 vs. temperature 1800 1850 1900 1950 2000 20 22 24 26 28 p1db(dbm) fre q uenc y( mhz ) +25 o c -40 o c +85 o c 1800 1850 1900 1950 2000 2050 2100 30 35 40 45 oip3(dbm) fre q uenc y( mhz ) +25 o c -40 o c +85 o c -40 -20 0 20 40 60 80 36 38 40 42 oip3(dbm) tem p erature ( o c ) qy() qy() 2 3 4 5 6 noise figure vs. frequency nf(db) p( ) -60 -55 -50 -45 -40 is-95, 9 ch. forward, 30 khz meas bw, 885 khz offset acpr is-95a vs. channel power acpr(dbc) freq=1.9ghz http://www.prewell.com november 2006 2 1800 1850 1900 1950 2000 0 1 frequency(mhz) +25 o c 10 12 14 16 18 20 22 -70 -65 output channel power(dbm) www.datasheet.co.kr datasheet pdf - http://www..net/
PH435 high linearity ingap hbt amplifier 2140 mhz application circuit frequency 2140 mhz s21 : gain 15.4 db s11 : input return loss -20 db s22 : output return loss -16 db output p1db +26.0 dbm 2140 mhz application circuit 20pf 1uf +5 v output ip3 @7dbm +42 dbm wcdma ch. power @ -45dbc aclr +17.0 dbm noise figure 3.0 db supply voltage 5 v current 152 ma 1.0pf rf in rf out 1.5pf 1.2pf 20pf 22nh 50 ? /6mm 14 16 18 20 gain vs. frequency gain(db) +25 o c -30 -20 -10 0 input return loss s11(db) +25 o c -15 -10 -5 0 output return loss s22(db) +25 o c -40 o c +85 o c 2050 2100 2150 2200 2250 10 12 frequency(mhz) +25 c -40 o c +85 o c 2050 2100 2150 2200 2250 -50 -40 frequency(mhz) +25 c -40 o c +85 o c 2050 2100 2150 2200 2250 -25 -20 frequency(mhz) 28 30 p1db vs. frequency 45 50 +7dbm/tone, +25 o c output ip3 vs. frequency 44 46 freq=2140mhz, +7dbm/tone oip3 vs. temperature 2050 2100 2150 2200 2250 20 22 24 26 p1db(dbm) fre q uenc y( mhz ) +25 o c -40 o c +85 o c 2050 2100 2150 2200 2250 30 35 40 45 oip3(dbm) fre q uenc y( mhz ) +25 o c -40 o c +85 o c -40-20 0 20406080 36 38 40 42 oip3(dbm) temperature( o c) qy() qy() temperature( c) 3 4 5 6 noise figure vs. frequency nf(db) -50 -45 -40 3gpp w-cdma, test model1 + 64dpch, 5mhz offset w-cdma aclr vs. channel power aclr(dbc) freq=2.14ghz http://www.prewell.com november 2006 3 2050 2100 2150 2200 2250 1 2 frequency(mhz) +25 o c 10 12 14 16 18 20 -60 -55 output channel power(dbm) www.datasheet.co.kr datasheet pdf - http://www..net/
PH435 high linearity ingap hbt amplifier 2300 mhz application circuit frequency 2300 mhz s21 : gain 15.0 db s11 : input return loss -15 db s22 : output return loss -15 db ot tp1db 25 5 db 2300 mhz application circuit 20pf 1uf +5 v o u t pu t p1db + 25 . 5 db m output ip3 @7dbm +42.5 dbm noise figure 3.1 db supply voltage 5 v current 152 ma 2.0pf rf in rf out 1.2pf 1.5pf 20pf 22nh 50 ? /6mm 1.8pf -15 -10 -5 0 input return loss s11(db) +25 o c 14 16 18 20 gain vs. frequency gain(db) +25 o c -15 -10 -5 0 output return loss s22(db) +25 o c 2200 2250 2300 2350 2400 -25 -20 frequency(mhz) +25 o c -40 o c +85 o c 2200 2250 2300 2350 2400 10 12 frequency(mhz) +25 c -40 o c +85 o c 2200 2250 2300 2350 2400 -25 -20 frequency(mhz) +25 o c -40 o c +85 o c 5 6 noise figure vs. frequency 30 32 p1db vs. frequency 2200 2250 2300 2350 2400 0 1 2 3 4 nf(db) fre q uenc y( mhz ) +25 o c 2200 2250 2300 2350 2400 20 22 24 26 28 p1db(dbm) fre q uenc y( mhz ) +25 o c -40 o c +85 o c qy() 40 45 50 +7dbm/tone, +25 o c output ip3 vs. frequency oip3(dbm) +25 o c qy() 40 42 44 46 freq=2300mhz, +7dbm/tone oip3 vs. temperature oip3(dbm) http://www.prewell.com november 2006 4 2200 2250 2300 2350 2400 2450 2500 30 35 frequency(mhz) +25 c -40 o c +85 o c -40-20 0 20406080 36 38 temperature( o c) www.datasheet.co.kr datasheet pdf - http://www..net/
PH435 high linearity ingap hbt amplifier absolute maximum ratings parameter rating unit device voltage +6 v device current 220 ma rf power input 12 dbm storage temperature -55 to +125 c abi to ti t t 40 t 85 lead-free /rohs compliant / green sot-89 package outline a m bi en t o pera ti ng t empera t ure - 40 t o + 85 c operation of this device above any of these parameters may cause permanent damage. esd / msl ratings 1. esd sensitive device. observe handling precautions. evaluation board layout (4x4) 2. esd rating : class 1c(passes at 1000v min.) human body model (hbm), jesd22-a114 3. esd rating : class iv (passes at 1000v min.) charged device model (cdm), jesd22-c101 4. msl (moisture sensitive level) rating : level 3 at +260 c convection reflow, j-std-020 mounting instructions evaluation board layout (4x4) mounting instructions 1. use a large ground pad area with many plated through-holes as shown. 2. we recommend 1 oz copper minimum. 3. measurement for our data sheet was made on 0.8mm thick fr-4 board. 4. add as much copper as possible to inner and outer layers near the part to ensure optimal thermal http://www.prewell.com november 2006 5 performance. 5. rf trace width depends on the board material and construction. 6. add mounting screws near the part to fasten the board to a heatsink. www.datasheet.co.kr datasheet pdf - http://www..net/
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